IGBT Power Discretes

Kokomo Semiconductors offers a standard planar IGBT process that incorporates polysilicon diodes as an on-board over-voltage clamp and polysilicon gate resistors for increased ruggedness and temperature insensitivity. Typical production devices operate at breakdown voltages ranging from 400 to 700 volts. Typical applications include output drive for automotive ignition systems, solar inverter bridge low-side and other motor controller applications.

Please refer to the datasheet below for further information.

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