Plasma Enhanced Chemical Vapor Deposition (PECVD)

The PECVD processing is done with five Novellus machines. For 125mm processing, we utilize four C1 machines. For 200mm processing a dual chamber Sequel Express is used. All machines are RF dual frequency, capable of depositing silicon nitride, silicon oxide, Teos, oxynitride, and for the 200 mm processing BPSG (Boron/Phosphorus doped oxide). Chemical Vapor Deposition (CVD) processing temperatures can range from 350°C to 450°C, and pressures 1.5 to 3.0 torr.

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